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CMO3EDMC ADG619 A5800261 N5397 B2023 SG2XXXJ EB402 EP9331
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  Datasheet File OCR Text:
 16 8V 12 4.5V
10 Vds=5V 8 2V
Id (A)
8
Id(A)
3V 2.5V
6
4 4 Vgs=1.5V 125C 2 25C 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 100 1.8 0 0 0.5 1 1.5 2 2.5 Vgs(Volts) Figure 2: Transfer Characteristics
Normalized On-Resistance
Vgs=2.5V 1.6 1.4 1.2 1 0.8 Id=4.2A Vgs=1.8V Vgs=4.5V
80
Vgs=1.8V
Rds(on) (m:)
60
Vgs=2.5V
40
Vgs=4.5V
20 0 4 8 12 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0
25
50
75
100
125
150
175
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
100 90 80 Id=4.2A
1E+01 1E+00 125C 1E-01 125C
Rds(on) (m:)
Is (A)
70 60 50 40 30 20 0 2 4 6 8 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C
1E-02 25C 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics
5 4 Vds=10V Id=4.2A
800
3 2
Capacitance (pF)
600
Ciss
Vgs (Volts)
400
200
Coss
1 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5
Crss
10
15
20
Vds (Volts) Figure 8: Capacitance Characteristics
100.0 Tj(max)=150C Ta=25C 10.0 Rds(on) limited 0.1s 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms 100Ps
20 Tj(max)=150C Ta=25C 15
Id (Amps)
1ms
Power (W)
10Ps
10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTJja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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